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BUR13
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BUR13

SKU: BUR13
BUR13 Transistor Silicon NPN CASE: TO63 MAKE: SGS Thomson
Product specifications
Type Transistor Silicon NPN
Case TO63
Manufacturer SGS Thomson
Vbr CBO 200
Vbr CEO 125
Max. PD (W) 250
t(f) Max. (S) .50u
Max. hFE 100
Min hFE 20
Ic Max. (A) 70
@Ic (test) (A) 25
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 1.4
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 125 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 70 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 573569
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