The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BUT18F
View detailed images (12)

BUT18F

SKU: BUT18F
BUT18F Transistor Silicon NPN CASE: TO220F MAKE: Philips
Datasheet
BUT18F Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220F
Manufacturer Philips
Vbr CEO 400
Max. PD (W) 20
t(f) Max. (S) 800n
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 570m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 850 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 115808
Back