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C106N
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C106N

SKU: C106N
C106N Semiconductor CASE: TO202AB MAKE: Generic
Product specifications
Type Semiconductor
Case TO202AB
Manufacturer General Electric Solid State
Vbr CBO 30
Vbr CEO 10
Max. PD (W) 250m
C(ob) (F) 50p
Derate (Amb) (W/°C) 1.8m
Dv/Dt Worst Case 8.0-
Firing Char-Igt Max. 200u
Firing Char-Vgt Max. 800m
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
I(h) Max. (A) 3.0m
Id(off) Max. (A) 10u
It(stat) Max. (A) 4.0
Polarity PNP
Supp Curr. I(TSM) 20+
t(switch) Off Typ. Time (S) 40u
t(switch) Off Typ. Time (S) 1.2u
V(drm) Max. 800
V(T) Max. 2.2
Trans. Freq (Hz) Min. 1.2M
@VCE (test) (V) 6.0
@Temp. (test) (°C) 25
@Temp. (test) (°C) 30
Oper. Temp (°C) Min -40
Oper. Temp (°C) Max. 110
@It (A) 4.0
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 1.2 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 1292608