| Type | Transistor Silicon NPN | |
| Case | TO106 | |
| Manufacturer | TAG Semiconductors | |
| Vbr CBO | 30 | |
| Vbr CEO | 15 | |
| Max. PD (W) | 250m | |
| C(ob) (F) | 1.7p | |
| hfe | 20 | |
| Icbo Max. @Vcb Max. (A) | .01u | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 960M | |
| @VCE (test) (V) | 3.0 | |
| @Ic (A) | 30m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.25 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Collector-Emitter Voltage |Vce| | 15 V | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 1.7 pF | |
| Transition Frequency (ft): | 960 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 580227 | |