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D11C3F1
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D11C3F1

SKU: D11C3F1
D11C3F1 Transistor Silicon NPN CASE: TO3 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer General Electric
Vbr CEO 50
Max. PD (W) 1.1
Max. hFE 120
Min hFE 40
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 25u
Polarity NPN
R(sat) (Û) 1.7
Derate Above 25°C 18m
Trans. Freq (Hz) Min. 130k
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.1 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 0.13 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 722126
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