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D11E407
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D11E407

SKU: D11E407
D11E407 Transistor Silicon NPN CASE: TO5 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer General Electric
Vbr CBO 110
Vbr CEO 80
Max. PD (W) 800m
Derate (Amb) (W/°C) 4.7m
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 70n
t(stor) Max. (S) 130n+
Trans. Freq (Hz) Min. 300M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 300 MHz
SKU 722115
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