The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
DMMT5551
View detailed images (1)

DMMT5551

SKU: DMMT5551
DMMT5551 Transistor Silicon NPN CASE: SOT26 MAKE: Generic
Datasheet
DMMT5551 Datasheet
Product specifications
Equivalent DMMT5551S
Type Transistor Silicon NPN
Case SOT26
Manufacturer Diodes
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code K4R
SKU 1429574
Back