The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
DQN1006
View detailed images (1)

DQN1006

SKU: DQN1006
DQN1006 Transistor Silicon NPN CASE: Standard MAKE: DIO
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer DIO
Vbr CBO 500
Vbr CEO 400
Max. PD (W) 600m
hfe 40
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1251913
Back