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DTD123ES
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DTD123ES

SKU: DTD123ES
DTD123ES Transistor Silicon Pre-Biased-NPN CASE: SC72 MAKE: Rohm Semiconductor
Datasheet
DTD123ES Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC72
Manufacturer Rohm Semiconductor
Mat. Silicon Logic
Polarity Pre-Biased-NPN
Mat. Struct. NPN
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 39
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 351962
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