| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT227A |
| Manufacturer |
ST Microelectronics - STM |
| Vbr CEO |
125 |
| Ckts Per Dev. |
1 |
| Max. PD (W) |
175 |
| t(f) Max. (S) |
300n |
| Ic Max. (A) |
120 |
| @Ic (test) (A) |
100 |
| Polarity |
NPN |
| Therm Res. ÚJC (°C/W) |
0.9 |
| Therm Res. (J-C) |
0.7 |
| VCE(sat) Max. |
2.0 |
| Oper. Temp (°C) Max. |
150 |
| Isolated Case (Y/N) |
Yes |
| Pinout Equivalence Number |
4-106 |
| Maximum Collector Power Dissipation (Pc) |
175 W |
| Maximum Collector-Base Voltage |Vcb| |
150 V |
| Maximum Collector-Emitter Voltage |Vce| |
125 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
120 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Forward Current Transfer Ratio (hFE), MIN |
1200 |
| SKU |
82009 |