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Home / Actives / Transistor / ETF81-050
ETF81-050
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ETF81-050

SKU: ETF81-050
ETF81-050 Transistor Silicon NPN CASE: M101 MAKE: Fuji Semiconductor
Datasheet
ETF81-050 Datasheet
Product specifications
Type Transistor Silicon NPN
Case M101
Manufacturer Fuji Semiconductor
Vbr CBO 600
Vbr CEO 600
Ckts Per Dev. 1
Max. PD (W) 120
t(f) Max. (S) 2.0u
Min hFE 100
Ic Max. (A) 15
@Ic (test) (A) 15
Polarity NPN
Tr Max. (s) 1.0u
Pinout Equivalence Number N/A
Maximum Collector Power Dissipation (Pc) 120 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 183543
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