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F123
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F123

SKU: F123
F123 Transistor Silicon NPN CASE: TO53 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO53
Manufacturer Generic
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 85
Max. hFE 50
Min hFE 10
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Polarity NPN
PD Max. (W) 400m
R(sat) (Û) 5.0
Derate Above 25°C 476m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 100
@VCE (V) 15
Ireg Nom. (A) 12m
V limit Max. 3.8
Z(t) Max. (Û) 80k
Peak Oper. Volt 100
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 713704
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