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GE5060
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GE5060

SKU: GE5060
GE5060 Transistor Silicon NPN CASE: TO3 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer General Electric
Vbr CEO 350
Max. PD (W) 125
t(f) Max. (S) 3.5u
Min hFE 40
Ic Max. (A) 20
Icbo Max. @Vcb Max. (A) .25m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 800n
t(stor) Max. (S) 8.0u
Derate Above 25°C 1.2
@VCE (test) 75
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 711663
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