The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GES2483
View detailed images (12)

GES2483

SKU: GES2483
GES2483 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 360m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 3.6m
hfe 175
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 175
SKU 711615
Back