GES2906

SKU: GES2906

GES2906 Transistor Silicon PNP CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES2906R
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	General Electric
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	360m
C(ob) (F)	3.0p
Derate (Amb) (W/°C)	3.6m
hfe	40
Ic Max. (A)	350m
Icbo Max. @Vcb Max. (A)	20n
Polarity	PNP
Trans. Freq (Hz) Min.	225M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	140
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	711614

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