The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GES3053
View detailed images (1)

GES3053

SKU: GES3053
GES3053 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES3053A
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 625m
C(ob) (F) 15p
Derate (Amb) (W/°C) 5.0m
hfe 50
Ic Max. (A) 700m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 1250372
Back