GES5401R

SKU: GES5401R

GES5401R Transistor Silicon PNP CASE: SOT23 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES5401
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	General Electric
Vbr CBO	160
Vbr CEO	150
Max. PD (W)	350m
Derate (Amb) (W/°C)	8.0m
Max. hFE	240
Min hFE	60
Ic Max. (A)	600m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	1432009

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