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GES5827A
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GES5827A

SKU: GES5827A
GES5827A Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Equivalent GES5827
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 360m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 3.6m
hfe 250
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 90M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SKU 711575
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