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GES930
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GES930

SKU: GES930
GES930 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES930R
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 360m
Derate (Amb) (W/°C) 3.6m
hfe 100
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Trans. Freq (Hz) Min. 90M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 10u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 711549
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