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GME6003
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GME6003

SKU: GME6003
GME6003 Transistor Silicon NPN CASE: TO106 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer Philips
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 360m
C(ob) (F) 12p
Derate (Amb) (W/°C) 3.6m
hfe 30
Icbo Max. @Vcb Max. (A) .10u
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 561523
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