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GS2013
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GS2013

SKU: GS2013
GS2013 Transistor Silicon NPN CASE: TO220 MAKE: GST
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer GST
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 30
Max. hFE 300
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 240m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 1271287
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