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GSDS50020
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GSDS50020

SKU: GSDS50020
GSDS50020 Transistor Silicon NPN CASE: TO3 MAKE: General Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer General Semiconductor
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 100
t(f) Max. (S) 175n
Min hFE 8.0
Ic Max. (A) 50
@Ic (test) (A) 50
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Tr Max. (s) 200n
R(sat) (Û) 20m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 541032
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