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GT125E
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GT125E

SKU: GT125E
GT125E Transistor Germanium PNP CASE: Standard MAKE: USSR
Product specifications
Type Transistor Germanium PNP
Case Standard
Manufacturer USSR
Vbr CBO 35
Max. PD (W) 150m
Derate (Amb) (W/°C) 3.0m
hfe 45
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) .50i
Oper. Temp (°C) Max. 60
@Ic (A) 100m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 1246651
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