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HEP637
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HEP637

SKU: HEP637
HEP637 Transistor Germanium PNP CASE: TO72 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO72
Manufacturer Motorola Semiconductor
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 150m
hfe 120
Ic Max. (A) 10m
Icbo Max. @Vcb Max. (A) 5.0u-
Polarity PNP
Trans. Freq (Hz) Min. 800M
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 4-20
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 553288
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