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HEPS0013
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HEPS0013

SKU: HEPS0013
HEPS0013 Transistor Silicon PNP CASE: TO18 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Motorola Semiconductor
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 400m
Derate (Amb) (W/°C) 2.6m
hfe 95
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 200n
Polarity PNP
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 95
SKU 554555
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