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HEPS3009
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HEPS3009

SKU: HEPS3009
HEPS3009 Transistor Silicon NPN CASE: SOT120 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case SOT120
Manufacturer Motorola Semiconductor
Vbr CBO 36
Vbr CEO 36
Max. PD (W) 80
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Derate Above 25°C 640m
Trans. Freq (Hz) Min. 175M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 36 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 554585
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