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HEPS3011
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HEPS3011

SKU: HEPS3011
HEPS3011 Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 80
Vbr CEO 50
Max. PD (W) 1.0
Min hFE 100-
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 200n
Polarity NPN
Derate Above 25°C 5.7m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 554587
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