The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HEPS3012
View detailed images (13)

HEPS3012

SKU: HEPS3012
HEPS3012 Transistor Silicon PNP CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 7.0
Derate (Amb) (W/°C) 40m
Min hFE 100
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 200n
Polarity PNP
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 554588
Back