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HEPS3019
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HEPS3019

SKU: HEPS3019
HEPS3019 Transistor Silicon NPN CASE: Standard MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer Generic
Vbr CBO 180
Vbr CEO 180
Max. PD (W) 8.0
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 54m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1282436
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