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HEPS3020
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HEPS3020

SKU: HEPS3020
HEPS3020 Transistor Silicon NPN CASE: Standard MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 10
Min hFE 100-
Ic Max. (A) 2.0
@Ic (test) (A) 250m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1282636
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