The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HEPS3032
View detailed images (1)

HEPS3032

SKU: HEPS3032
HEPS3032 Transistor Silicon PNP CASE: Standard MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 10
Derate (Amb) (W/°C) 80m
Min hFE 140-
Ic Max. (A) 2.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 140
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 1268085
Back