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HEPS3035
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HEPS3035

SKU: HEPS3035
HEPS3035 Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 270
Vbr CEO 270
Max. PD (W) 1.0
Min hFE 35-
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 6.6m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 270 V
Maximum Collector-Emitter Voltage |Vce| 270 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 554591
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