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HEPS5022
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HEPS5022

SKU: HEPS5022
HEPS5022 Transistor Silicon PNP CASE: TO18 MAKE: Motorola Semiconductor
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Motorola Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.8
Derate (Amb) (W/°C) 12m
Min hFE 85-
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 3.0n
Polarity PNP
Trans. Freq (Hz) Min. 275M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.8 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 275 MHz
Forward Current Transfer Ratio (hFE), MIN 85
SKU 554626
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