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HF0100
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HF0100

SKU: HF0100
HF0100 Transistor Silicon NPN CASE: M122 MAKE: Raytheon
Product specifications
Type Transistor Silicon NPN
Case M122
Manufacturer Raytheon
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 5.0
Max. hFE 100-
Min hFE 30
Ic Max. (A) 400m
@Ic (test) (A) 75m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 1.5G
Oper. Temp (°C) Max. 175
@VCE (V) 14
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1500 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1282233
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