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HPT1012
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HPT1012

SKU: HPT1012
HPT1012 Transistor Silicon NPN CASE: TO83 MAKE: International Rectifier - IR
Product specifications
Type Transistor Silicon NPN
Case TO83
Manufacturer International Rectifier - IR
Vbr CEO 120
Max. PD (W) 350
t(f) Max. (S) 2.5u
Min hFE 20
Ic Max. (A) 100
@Ic (test) (A) 50
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Tr Max. (s) 2.0u
R(sat) (Û) 25m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 350 W
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 1276127
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