The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HSE350
View detailed images (12)

HSE350

SKU: HSE350
HSE350 Transistor Silicon PNP CASE: TO106 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer HSE
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 500m
Derate (Amb) (W/°C) 5.0m
hfe 30
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1279241
Back