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HSE830
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HSE830

SKU: HSE830
HSE830 Transistor Silicon PNP CASE: TO3 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer HSE
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 115
Derate (Amb) (W/°C) 920m
Min hFE 50
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 118 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 1269297
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