The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
IR2002
View detailed images (13)

IR2002

SKU: IR2002
IR2002 Transistor Silicon NPN CASE: TO3 MAKE: Sharp Microelectronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Sharp Microelectronics
Vbr CEO 80
Max. PD (W) 720m
Max. hFE 30k
Min hFE 2.0k
Ic Max. (A) 1.0
@Ic (test) (A) 600m
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.72 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 1277463
Back