KSA812

SKU: KSA812

KSA812 Transistor - CASE: SOT23 MAKE: Samsung

Product specifications

Weight	0.01 kg
Equivalent	KSA812Y
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	Samsung
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	150m
C(ob) (F)	4.5p
hfe	90
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	180M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	150
@Ic (A)	1.0m
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	4.5 pF
Transition Frequency (ft):	180 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SMD Transistor Code	D1G_D1L_D1O_D1Y
SKU	569307

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