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KSA812Y
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KSA812Y

SKU: KSA812Y
KSA812Y Transistor - CASE: SOT23 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSA812
Type Transistor Silicon PNP
Case SOT23
Manufacturer Samsung
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 150m
C(ob) (F) 4.5p
hfe 90
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 180M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 135
SMD Transistor Code D1G_D1L_D1O_D1Y
SKU 569433
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