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KSA812
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KSA812

SKU: KSA812
KSA812 Transistor Silicon PNP CASE: SOT23 MAKE: Samsung
Product specifications
Equivalent KSA812Y
Type Transistor Silicon PNP
Case SOT23
Manufacturer Samsung
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 150m
C(ob) (F) 4.5p
hfe 90
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 180M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SMD Transistor Code D1G_D1L_D1O_D1Y
SKU 569307
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