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KSB1116A
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KSB1116A

SKU: KSB1116A
KSB1116A Transistor - CASE: TO92 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSB1116
Type Transistor Silicon PNP
Case TO92
Manufacturer Samsung
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 750m
C(ob) (F) 25p
Derate (Amb) (W/°C) 6m
hfe 135
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 70M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 135
SKU 217906
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