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KSB1151Y
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KSB1151Y

SKU: KSB1151Y
KSB1151Y Transistor Silicon PNP CASE: SOT32 MAKE: Samsung
Product specifications
Equivalent KSB1151
Type Transistor Silicon PNP
Case SOT32
Manufacturer Samsung
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
t(f) Max. (S) 1.0u
Max. hFE 400
Min hFE 100
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 160
SKU 569873
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