The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
KSB810
View detailed images (12)

KSB810

SKU: KSB810
KSB810 Transistor Silicon PNP CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 350m
C(ob) (F) 17p
hfe 70
Ic Max. (A) 700m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 17 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 217932
Back