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KSC1009G
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KSC1009G

SKU: KSC1009G
KSC1009G Transistor - CASE: TO92 MAKE: Samsung
+ VAT 20% for UK purchases
Product specifications
Equivalent KSC1009
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 160
Vbr CEO 140
Max. PD (W) 800m
C(ob) (F) 8.0p
hfe 40
Ic Max. (A) 700m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 30M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 569883
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