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KSC5036
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KSC5036

SKU: KSC5036
KSC5036 Transistor Silicon NPN CASE: TO126 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Samsung
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 7
Max. hFE 320
Min hFE 40
Ic Max. (A) 150m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 56m
Trans. Freq (Hz) Min. 400M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7 W
Maximum Collector-Base Voltage |Vcb| 220 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1282147
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