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KSC838
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KSC838

SKU: KSC838
KSC838 Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Datasheet
KSC838 Datasheet
Product specifications
Equivalent KSC838Y
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 250m
C(ob) (F) 3.2p
hfe 40
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 12
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.2 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 355522
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