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KSD227G
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KSD227G

SKU: KSD227G
KSD227G Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Product specifications
Equivalent KSD227
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 400m
hfe 70
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SKU 569554
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