The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
LDA417
View detailed images (1)

LDA417

SKU: LDA417
LDA417 Transistor Silicon PNP CASE: TO122 MAKE: NAPC
Product specifications
Type Transistor Silicon PNP
Case TO122
Manufacturer NAPC
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 360m
C(ob) (F) 400f
Derate (Amb) (W/°C) 2.9m
hfe 40
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 1.6G
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 2.0m
Pinout Equivalence Number 4-27
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 1600 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1279362
Back