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MA112
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MA112

SKU: MA112
MA112 Transistor Germanium PNP CASE: TO5-8 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium PNP
Case TO5-8
Manufacturer Matsushita Electronics
Vbr CBO 15
Vbr CEO 15
Max. PD (W) 175m
hfe 30
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 15u
I(io) Max. (A) 4.0n
V(io) Max. (V) 3.0m
Polarity PNP
PD Max. (W) 500u
@VCE (test) (V) 6.0
Inp Bias Curr. Max. (A) 15n
Unity Gain BW (Hz) 50k
Com Mode Inp Range (VICR) 7.0
Temp Coef. of VIO 15u
Oper. Temp (°C) Min 0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
No. of Pins 8
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.175 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 1C
SKU 549524
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